BAV70E6327HTSA1 Dual common cathode silicon switching diode array rated for 80V reverse voltage and 200mA forward current. Suitable for high-speed switching applications in surface mount designs.
Mfr Part #:

BAV70E6327HTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual common cathode silicon switching diode array rated for 80V reverse voltage and 200mA forward current. Suitable for high-speed switching applications in surface mount designs.
Total Stock: 869 pcs

BAV70E6327HTSA1 Available from 1 distributor

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BAV70E6327HTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Automotive Grade
Current
Diode Capacitance
Diode Configuration
Diode Reverse Voltage
Forward Current
Forward Current Surge (Nominal @ t = 1 ms)
Forward Current Surge (Nominal @ t = 1 s double)
Forward Current Surge (Nominal @ t = 1 s single)
Forward Current Surge (Nominal @ t = 1 µs)
Forward Voltage (Maximum @ IF = 1 mA)
Forward Voltage (Maximum @ IF = 10 mA)
Forward Voltage (Maximum @ IF = 100 mA)
Forward Voltage (Maximum @ IF = 150 mA)
Forward Voltage (Maximum @ IF = 50 mA)
Halogen Free
Industrial Grade
Junction Temperature
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Peak Reverse Voltage
Reverse Current (Maximum @ VR = 25 V, TA = 25 °C)
Reverse Current (Maximum @ VR = 70 V, TA = 150 °C)
Reverse Current (Maximum @ Vr = 70 V)
Reverse Recovery Time
Reverse Recovery Time (trr)
SVHC Present
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance Junction-Soldering Point
Total Power Dissipation
Voltage

BAV70E6327HTSA1 Description

Short technical summary and product information.

The BAV70E6327HTSA1 is a dual common cathode silicon switching diode array from Infineon Technologies. It features two diodes in a common cathode configuration, designed for high-speed switching applications.

 

Key electrical specifications include a reverse voltage of 80V (peak 85V), forward current of 200mA, and low forward voltage (715mV at 1mA, 1250mV at 150mA). Reverse recovery time is 4ns, and diode capacitance is 1.5pF, making it suitable for fast switching.

 

The device is qualified according to AEC Q101 for automotive applications. It is housed in a surface-mount SOT-23 package (PG-SOT23) with a total power dissipation of 250mW. Operating temperature range is up to 150°C.

BAV70E6327HTSA1 Quick Information

Product Type: Switching Diode Array
Series: BAV70
Canonical Name: Infineon Technologies BAV70E6327HTSA1 Dual Common Cathode Switching Diode Array
Subcategory: Switching Diodes

BAV70E6327HTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BAV70E6327HTSA1 Features

  • Dual common cathode diode configuration.
  • 80V reverse voltage rating.
  • 200mA forward current capability.
  • 4ns fast reverse recovery time.
  • AEC Q101 automotive qualified.

BAV70E6327HTSA1 Applications

  • High-speed switching circuits.
  • General purpose rectification.
  • Automotive electronic modules.
  • Signal clamping and protection.

BAV70E6327HTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating?

80V (peak 85V).

What is the forward current rating?

200mA.

What is the forward voltage at 1mA?

715mV maximum.

What is the reverse recovery time?

4ns maximum.

What package is this device available in?

SOT-23 (PG-SOT23).

Is this device AEC Q101 qualified?

Yes, qualified according to AEC Q101.

What is the operating temperature range?

Maximum junction temperature 150°C, storage temperature -65°C to 150°C.

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