| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
869 pcs
|
869 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Diode Capacitance | |
| Diode Configuration | |
| Forward Current | |
| Halogen Free | |
| Industrial Grade | |
| Junction Temperature | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The BAV70E6327HTSA1 is a dual common cathode silicon switching diode array from Infineon Technologies. It features two diodes in a common cathode configuration, designed for high-speed switching applications.
Key electrical specifications include a reverse voltage of 80V (peak 85V), forward current of 200mA, and low forward voltage (715mV at 1mA, 1250mV at 150mA). Reverse recovery time is 4ns, and diode capacitance is 1.5pF, making it suitable for fast switching.
The device is qualified according to AEC Q101 for automotive applications. It is housed in a surface-mount SOT-23 package (PG-SOT23) with a total power dissipation of 250mW. Operating temperature range is up to 150°C.
80V (peak 85V).
200mA.
715mV maximum.
4ns maximum.
SOT-23 (PG-SOT23).
Yes, qualified according to AEC Q101.
Maximum junction temperature 150°C, storage temperature -65°C to 150°C.