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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Continuous Forward Current | |
| Continuous Reverse Voltage | |
| Current | |
| Diode Capacitance | |
| Forward Voltage | |
| IR (Maximum @ VR = 20 V) | |
| IR (Maximum @ VR=5 V) | |
| IR (Maximum @ VR=5 V, TA=80 °C) | |
| Lead Code | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Package / Case | |
| Peak Repetitive Forward Current | |
| Peak Repetitive Reverse Voltage | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Voltage |
The BAV45 from Central Semiconductor Corp is a silicon picoampere switching diode optimized for ultra-low leakage applications. It offers a peak repetitive reverse voltage of 35V and continuous reverse voltage of 20V, with a maximum continuous forward current of 50mA.
Key electrical characteristics include a maximum forward voltage of 1V at 10mA, reverse leakage current as low as 5pA at 5V, and a typical diode capacitance of 1.3pF. The device has a reverse recovery time of 600ns, making it suitable for low-speed switching applications where minimal leakage is critical.
The BAV45 is housed in a hermetically sealed TO-18 (2-lead) metal case with through-hole mounting, providing robust protection for harsh environments. The operating and storage temperature range spans -65°C to +125°C, with a thermal resistance of 500°C/W.
20V
50mA continuous, 100mA peak repetitive
Maximum 1V at 10mA forward current
600ns under test conditions IF=IR=10mA, Irr=1.0mA, RL=100Ω
TO-18 (2-lead) through-hole
5pA at 5V, 10pA at 20V, and 250pA at 5V and 80°C
-65°C to 125°C