| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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47,912 pcs
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47912 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAV19W-G is a switching diode manufactured by Taiwan Semiconductor Corporation. This component is designed for general-purpose switching applications and is housed in a compact SOD-123 surface mount package.
Key electrical specifications include a maximum DC reverse voltage (Vr) of 100V and an average rectified current (Io) of 200mA. The forward voltage (Vf) is typically 1.25V at 200mA, with a reverse leakage current of 100nA at 100V. The diode has a reverse recovery time (trr) of 50ns, indicating its suitability for high-speed switching operations.
This diode is suitable for applications requiring fast switching speeds and reliable performance. Its surface mount package makes it convenient for automated assembly processes on printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (Vr) for the BAV19W-G is 100V.
The average rectified current (Io) for the BAV19W-G is 200mA.
The typical forward voltage (Vf) for the BAV19W-G at 200mA is 1.25V.
The reverse recovery time (trr) for the BAV19W-G is 50ns.
The BAV19W-G diode is supplied in a SOD-123 surface mount package.