| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
422 pcs
|
422 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Diode Capacitance | |
| Forward Current | |
| Junction Temperature | |
| Mounting Type | |
| Reverse Recovery Time | |
| Reverse Voltage |
The BAV101 from NXP Semiconductors is a single general-purpose switching diode designed for high-speed applications. It utilizes planar technology and is housed in a compact, hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
Key electrical characteristics include a maximum forward current of 250 mA and a reverse recovery time of 50 ns. It also features low capacitance, typically 5 pF, and low leakage current, making it suitable for various switching tasks.
This diode is designed for applications requiring high-speed switching, voltage clamping, and reverse polarity protection. Its small SMD package facilitates easy integration into printed circuit boards (PCBs) with standard footprints.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward current is 250 mA.
The reverse recovery time is 50 ns.
The diode capacitance is a maximum of 5 pF.
The maximum reverse voltage is 150 V.
The maximum power dissipation is 400 mW at an ambient temperature of 25 °C.
The package type is SOD80C.