| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAT86,133 from NXP Semiconductors is a single Schottky barrier diode designed for high-speed switching applications. Encapsulated in a DO-34 through-hole package, this diode features a low forward voltage and guard-ring protection for enhanced reliability.
Key electrical characteristics include a maximum reverse voltage rating of 35V and a maximum forward current of 0.2A. The typical forward voltage is 0.9V at 100mA, and it boasts an ultra-high-speed switching capability with a reverse recovery time of 4ns. The operating temperature range is from -65°C to 125°C, with a junction temperature also rated up to 125°C.
Its compact dimensions (3.04 x 1.6 x 1.6 mm) and through-hole mounting make it suitable for various circuit designs. The BAT86,133 is a reliable choice for applications requiring fast rectification and low forward voltage drop.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (V(RRM)) for the BAT86,133 is 35V.
The BAT86,133 has a maximum forward current of 0.2A.
The typical forward voltage of the BAT86,133 is 0.9V at 100mA.
The BAT86,133 is supplied in a DO-34 package.
The BAT86,133 operates between -65°C and 125°C.