| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Storage Temperature |
The NXP Semiconductors BAT85,113 is a planar Schottky barrier diode designed for applications requiring ultra-high-speed switching, voltage clamping, protection circuits, and blocking diodes. It features a hermetically-sealed leaded glass package in a subminiature SOD68 (DO-34) form factor, suitable for mounting on a 5.08 mm pitch.
Key electrical characteristics include a maximum reverse voltage of 30V and a maximum forward current of 200mA. The forward voltage is typically 400mV at 10mA, with a maximum of 800mV at 100mA. It also offers a low reverse current of 2µA at 25V and a diode capacitance of 10pF at 1MHz.
Thermal performance is supported by a junction temperature up to 125°C and an ambient temperature range of -65°C to 125°C. The thermal resistance from junction to ambient is 320 K/W in free air.
This diode is suitable for various electronic designs due to its robust construction and reliable performance characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 30V.
The maximum forward current is 200mA.
The forward voltage is 400mV at 10mA.
The package type is DO-34.
The operating temperature range is -65°C to 125°C.