| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,746 pcs
|
2746 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Diode Capacitance | |
| Forward Current | |
| Forward Voltage | |
| Junction Temperature | |
| Mounting Type | |
| Reverse Current | |
| Reverse Voltage | |
| Storage Temperature | |
| Thermal Resistance |
The NXP Semiconductors BAT754S is a planar dual Schottky barrier diode encapsulated in a small SOT23 surface-mounted device (SMD) plastic package. It is designed with an integrated guard ring for stress protection.
Key electrical characteristics include a low forward voltage, with a typical value of 600 mV at 100 mA. The reverse voltage is rated up to 30 V, and the typical reverse leakage current is 2 µA at 25 V. The diode capacitance is typically 10 pF at 1 V and 1 MHz.
This component is suitable for applications such as ultra high-speed switching, line termination, voltage clamping, and reverse polarity protection. Its SOT23 package and surface-mount capability make it convenient for automated assembly processes.
The operating junction temperature range is -55 °C to 125 °C, with a maximum storage temperature of 150 °C. The thermal resistance from junction to ambient is 500 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical forward voltage of the BAT754S diode is 600 mV at 100 mA.
The maximum reverse voltage for the BAT754S diode is 30 V.
The typical reverse leakage current of the BAT754S diode is 2 µA at 25 V.
The diode capacitance of the BAT754S is typically 10 pF at 1 V and 1 MHz.
The maximum operating junction temperature for the BAT754S is 125 °C.
The BAT754S diode is supplied in a SOT23 surface-mount plastic package.