| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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92 pcs
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92 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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| Technology |
The Infineon BAT68E6327 is a silicon Schottky diode from the Bat68 series. It is designed for use in RF applications and offers a repetitive reverse voltage rating of 8V and a forward current of 130mA.
This diode has a typical forward voltage of 0.5V at 0.01A and a low reverse current of 0.1µA at 1V. The power dissipation is rated at 150mW. It operates within a wide temperature range, from -55°C to +150°C.
The BAT68E6327 is packaged in a SOT-23 surface-mount case and is supplied on a reel. Its compact size and surface-mount capability make it suitable for various electronic circuits where space is a constraint.
This component is manufactured by Infineon Technologies and falls under the Schottky Diodes & Rectifiers product category.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The forward current rating is 130 mA.
The repetitive reverse voltage is 8 V.
The typical forward voltage is 0.5 V at 10 mA.
The typical reverse current is 0.1 µA at 1 V.
The power dissipation is 150 mW.
The operating temperature range is -55°C to +150°C.
The package is SOT-23.