| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BAT6804WH6327XTSA1 is a silicon Schottky diode consisting of two series-connected diodes in a single surface-mount package. It is designed for mixer applications in the VHF/UHF range and for high-speed switching applications. The device offers a maximum reverse voltage of 8V and a maximum forward current of 130mA, with a total power dissipation of 150mW. Junction temperature is rated up to 150°C.
Electrical characteristics include a typical forward voltage of 340mV at 1mA and 318mV at 10mA, with a maximum of 500mV at 10mA. Reverse leakage current is limited to 0.1µA at 1V and 1.2µA at 60°C. The diode capacitance is 1pF maximum at 0V bias and 1MHz, and the differential forward resistance is 10 ohms maximum at 5mA and 10kHz. The minimum breakdown voltage is 8V at 10µA.
The device is housed in a PG-SOT323 package (SOT323-3, SC-70) and is designed for surface-mount assembly. Thermal resistance from junction to soldering point is 390 K/W. The package is Pb-free and RoHS compliant. This diode is suitable for RF signal detection, mixing, and fast switching in communication and industrial equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.95 | $0.95 |
| 10+ | $0.59 | $0.59 |
| 100+ | $0.38 | $0.38 |
| 500+ | $0.29 | $0.29 |
| 1,000+ | $0.27 | $0.27 |
| 3,000+ | $0.23 | $0.23 |
| 6,000+ | $0.21 | $0.21 |
| 9,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8V.
130mA.
Typical 318mV, maximum 500mV.
PG-SOT323 (SOT323-3, SC-70).
150mW maximum.
1pF maximum at 0V, 1MHz.
VHF/UHF mixer and high-speed switching applications.