| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
165,000 pcs
|
165000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Average Rectified Forward Current | |
| Breakdown Voltage | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Capacitance | |
| Forward Current | |
| Forward Surge Current | |
| Forward Voltage (Minimum/Typical/Maximum @ IF=1 mA) | |
| Forward Voltage (Minimum/Typical/Maximum @ IF=10 mA) | |
| Forward Voltage (Minimum/Typical/Maximum @ IF=100 mA) | |
| Forward Voltage (Minimum/Typical/Maximum @ IF=30 mA) | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Package Type | |
| Power Dissipation | |
| Reverse Current (Maximum @ VR=30 V) | |
| Reverse Current (Maximum @ VR=30 V, TA=85 °C) | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Speed | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance | |
| Voltage |
The BAT6402VH6327XTSA1 is a silicon Schottky diode from Infineon Technologies, designed for low-loss, fast-recovery applications such as meter protection, bias isolation, and clamping. It is rated for a reverse voltage of 40V and a forward current of 250mA, with a non-repetitive peak surge forward current of 800mA (t ≤ 10ms) and an average rectified forward current of 120mA (50/60Hz sinusoidal).
The diode exhibits a low forward voltage, ranging from 270mV (min) at 1mA to 750mV (max) at 100mA, which minimizes power loss in low-voltage circuits. It has a fast reverse recovery time of 5ns (max) and a low diode capacitance of 4pF (typ) at 1V, making it suitable for high-frequency switching. The device is qualified according to AEC Q101 for automotive applications and is Pb-free (RoHS compliant).
Packaged in a surface-mount SC-79 (SOD-523) case (Infineon PG-SC79-2-1), the BAT6402VH6327XTSA1 is compact and suitable for space-constrained designs. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 250mW. The integrated diffused guard ring enhances reliability and robustness against electrostatic discharge (ESD).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.56 | $0.56 |
| 10+ | $0.36 | $0.36 |
| 100+ | $0.23 | $0.23 |
| 500+ | $0.16 | $0.16 |
| 1,000+ | $0.14 | $0.14 |
| 3,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 40V.
The forward current is 250mA, with a non-repetitive peak surge forward current of 800mA (t ≤ 10ms) and an average rectified forward current of 120mA (50/60Hz sinusoidal).
The forward voltage is 270mV (min), 320mV (typ), 350mV (max) at 1mA; 310mV (min), 385mV (typ), 430mV (max) at 10mA; 370mV (min), 440mV (typ), 520mV (max) at 30mA; and 500mV (min), 570mV (typ), 750mV (max) at 100mA.
The reverse recovery time is 5ns maximum (tested at IF=10mA, IR=10mA, RL=100Ω).
It is available in a surface-mount SC-79 (SOD-523) package, with the Infineon supplier device package designation PG-SC79-2-1.
Yes, it is qualified according to AEC Q101 as mentioned in the datasheet.
The junction temperature is rated up to 150°C, and the storage temperature range is -55°C to 150°C.