| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
980 pcs
|
980 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Diode Capacitance | |
| Forward Current | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Reverse Current | |
| Reverse Recovery Time | |
| SVHC Present | |
| Storage Temperature |
The Infineon BAT64 is a Silicon Schottky Diode suitable for applications requiring low-loss and fast-recovery characteristics, such as meter protection, bias isolation, and clamping. It features an integrated diffused guard ring and a low forward voltage.
Key electrical specifications include a maximum reverse voltage of 40V and a maximum forward current of 250mA. The non-repetitive peak surge forward current is rated at 800mA for transients up to 10ms. Its average rectified forward current is 120mA (50/60Hz, sinus).
Electrical performance includes a breakdown voltage of 40V at 10µA. The forward voltage is typically 385mV at 1mA, 570mV at 10mA, and 750mV at 30mA. Diode capacitance is typically 4pF at 1V and 1MHz, with a reverse recovery time of 5ns under specified conditions.
This diode is qualified according to AEC Q101 and comes in a Pb-free package. The operating junction temperature is up to 150°C, with a storage temperature range of -55°C to 150°C. The SCD80 package is suitable for surface mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VR) for the BAT64 diode is 40V.
The maximum forward current (IF) for the BAT64 diode is 250mA.
The typical forward voltage (VF) at 1mA for the BAT64 diode is 385mV.
The reverse recovery time (trr) for the BAT64 diode is a maximum of 5ns.
The BAT64 diode is supplied in the SCD80 package.