| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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258,000 pcs
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258000 pcs | On Request | 1 | On Request | On Request | 0516+ | On Request | On Request |
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The BAT63-07WE6327 is a low barrier Schottky mixer diode manufactured by Infineon Technologies. It contains two independent Schottky diode elements in a single SC-82A/SOT-343 surface mount package. The diode is designed for RF mixer applications where low barrier height and fast switching are required.
Electrical characteristics include a maximum reverse voltage of 3V, a maximum forward current of 100mA, and a maximum power dissipation of 100mW. Typical capacitance measures 0.85pF at 0.2V reverse bias and 1MHz, making it suitable for high-frequency signal paths. Maximum junction temperature is 150°C.
The part is supplied in a PG-SOT343-4 package, which is a compact surface mount configuration suited for automated assembly. The two independent diodes allow flexibility in mixer or detector circuit designs.
Applications include RF mixer stages, detector circuits, and signal conditioning where low barrier Schottky characteristics are beneficial.
| Qty | Low | High |
|---|---|---|
| 2,358+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Schottky diode with two independent elements.
3V.
100mA.
SC-82A / SOT-343, supplier package PG-SOT343-4.
0.85pF at 0.2V reverse bias and 1MHz.
100mW.
150°C.