| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 0434+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The Infineon BAT62E6327 is a Schottky anti-parallel RF diode designed for low barrier mixer applications. It features a maximum reverse voltage of 40 V and a forward current of 20 mA.
Power dissipation is rated at 100 mW, making it suitable for low-power signal processing. The diode offers a low typical capacitance of 0.6 pF at 0 V and 1 MHz, enabling high-frequency performance.
The device is housed in a TO-253-4 (SOT-143-4) surface-mount package, compatible with standard assembly processes. Designed for RF circuits, it serves as a reliable component for mixing and detection stages.
The maximum reverse voltage is 40 V.
The forward current rating is 20 mA.
The maximum power dissipation is 100 mW.
The typical junction capacitance is 0.6 pF at 0 V and 1 MHz.
It is available in TO-253-4 (SOT-143-4) surface-mount package.