| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,243 pcs
|
26243 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,784 pcs
|
2784 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Forward Current | |
| Forward Voltage | |
| Junction Temperature | |
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| Package / Case | |
| Pitch | |
| Power Dissipation | |
| Reverse Current | |
| Reverse Voltage | |
| Storage Temperature | |
| Supplier Device Package |
The BAT54S from NXP Semiconductors is a planar Schottky barrier diode array featuring two diodes in a series configuration, encapsulated in a small SOT23 (TO-236AB) surface-mount plastic package. It incorporates an integrated guard ring for stress protection.
Electrical ratings include a maximum reverse voltage of 30 V, maximum forward current of 200 mA at 25°C ambient temperature, and a maximum forward voltage of 800 mV at 100 mA pulsed current. The maximum reverse current is 2 µA at 25 V reverse voltage.
With a maximum power dissipation of 250 mW and an operating junction temperature range of -55°C to 150°C, this device is suitable for ultra high-speed switching, line termination, voltage clamping, and reverse polarity protection applications.
Packaged in the space-saving SOT23 format with a 1.9 mm pitch and body dimensions of 2.9 mm x 1.3 mm x 1 mm, the BAT54S is ideal for compact PCB designs.
The maximum reverse voltage is 30V.
The maximum forward current is 200 mA at 25°C ambient temperature.
The maximum forward voltage is 800 mV at IF = 100 mA (pulsed, 25°C).
The maximum reverse current is 2 µA at VR = 25 V (pulsed, 25°C).
The BAT54S is supplied in a SOT23 (TO-236AB) surface-mount package with 3 terminals.
The operating temperature range is -55°C to 150°C.
The maximum power dissipation is 250 mW at 25°C ambient.