SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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18,950 pcs
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14,995 pcs
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14995 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,158 pcs
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2158 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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791 pcs
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791 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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289 pcs
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289 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BAT54AW is a planar Schottky barrier diode designed for ultra-high-speed switching, voltage clamping, protection circuits, and blocking diode applications. It features a low forward voltage and guard ring protection.
This diode has a continuous reverse voltage rating of 30V and a continuous forward current of 200mA. Key electrical characteristics include a maximum forward voltage of 240mV at 0.1mA and a maximum reverse current of 2μA at 25V. The diode capacitance is a maximum of 10pF at 1MHz and 1V.
Encapsulated in a very small SOT-323 plastic SMD package, the BAT54AW is suitable for space-constrained designs. It operates within an ambient temperature range of -65°C to +125°C and has a junction temperature limit of 125°C. The total power dissipation for the package is 200mW at 25°C ambient.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous reverse voltage for the BAT54AW is 30V.
The maximum continuous forward current for the BAT54AW is 200mA.
The typical forward voltage at 10mA for the BAT54AW is 400mV.
The reverse recovery time for the BAT54AW is a maximum of 5ns.
The BAT54AW is supplied in a SOT-323 package.
The operating ambient temperature range for the BAT54AW is -65°C to +125°C.
