| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Capacitance @ Vr, F | |
| Configuration | |
| Current | |
| Diode Type | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Power Dissipation (Max) | |
| Resistance @ If, F | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Voltage |
The Infineon BAT17E6327HTSA1 is a silicon Schottky diode designed for mixer applications in the VHF/UHF range and high-speed switching. It features a maximum reverse voltage of 4V and a forward current rating of 130mA. The diode offers low forward voltage: 200mV minimum, 275mV typical, 350mV maximum at 0.1mA; 250mV minimum, 340mV typical, 450mV maximum at 1mA; and 350mV minimum, 425mV typical, 600mV maximum at 10mA. Reverse current is low, with a maximum of 0.25µA at 3V and 10µA at 4V. The diode capacitance is 0.55pF typical at 0V and 1MHz, and differential forward resistance is 8Ω typical at 5mA. The device is AEC-Q101 qualified and RoHS compliant. It is housed in a surface mount SOT-23 (TO-236) package with gull wing leads, suitable for automated assembly. The operating temperature range is -55 to 125°C, with a maximum junction temperature of 150°C and power dissipation of 150mW.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.26 | $0.26 |
| 10+ | $0.17 | $0.17 |
| 100+ | $0.12 | $0.12 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.08 | $0.08 |
| 3,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4V.
130mA.
350mV minimum, 425mV typical, 600mV maximum.
SOT-23 (TO-236) surface mount package.
0.55pF at 0V, 1MHz.
Yes.
-55 to 125°C.