| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,040 pcs
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1040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAT17 from NXP Semiconductors is a Silicon Schottky Diode engineered for demanding applications in the VHF/UHF frequency range, particularly for mixer circuits. It is also suitable for high-speed switching applications.
This diode boasts a maximum reverse voltage of 4V and a maximum forward current of 130mA. Its electrical characteristics include a breakdown voltage of at least 4V at 10 µA, a maximum reverse current of 1.25 µA at 3V and 60°C, and a maximum forward voltage of 600mV at 0.1mA. The diode capacitance is a maximum of 0.75 pF at 0V and 1 MHz, with a differential forward resistance of up to 15 Ω at 5mA and 10 kHz.
Packaged in a surface-mount SOT23 case, the BAT17 is designed for efficient integration into electronic circuits. It operates within a temperature range of -55°C to 125°C, with a maximum junction temperature of 150°C. The component is qualified according to AEC Q101 standards and is RoHS compliant.
Key specifications include a maximum power dissipation of 150mW and a junction-to-soldering point thermal resistance of up to 490 K/W for the BAT17 variant. These features make the BAT17 a reliable choice for various RF and high-speed electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the BAT17 diode is 4V.
The maximum forward current for the BAT17 diode is 130mA.
The BAT17 diode is available in the SOT23 package.
The diode capacitance of the BAT17 is a maximum of 0.75 pF at 0V and 1 MHz.
The operating temperature range for the BAT17 diode is -55°C to 125°C.