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BAT17-06WE6327 RF Schottky diode from Infineon Technologies, rated for 4V reverse voltage and 130mA forward current. Suitable for mixer and detector applications in RF circuits.
Mfr Part #:

BAT17-06WE6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
RF Schottky diode from Infineon Technologies, rated for 4V reverse voltage and 130mA forward current. Suitable for mixer and detector applications in RF circuits.
✓ Total Stock: 147,000 pcs
$ Price Range: $0.12

BAT17-06WE6327 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
147,000 pcs
On Request
147000 pcs On Request 1 On Request On Request 03+ On Request On Request
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BAT17-06WE6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Diode Type
Lead Style
Operating Temperature
Power Dissipation (Max)
Resistance @ If, F
Supplier Device Package
Tape & Reel
Voltage
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BAT17-06WE6327 Description

Short technical summary and product information.

The BAT17-06WE6327 is an RF Schottky diode from Infineon Technologies, featuring a pair of Schottky diodes in a common anode configuration. It is designed for use in RF mixer and detector circuits. The diode is rated for a reverse voltage of 4V and a forward current of 130mA. It offers a low capacitance of 0.75pF (at 0V, 1MHz) and a series resistance of 15 Ohm (at 5mA, 10kHz), making it suitable for high-frequency applications. The maximum power dissipation is 150mW, and the junction temperature can reach up to 150°C. The device is housed in an SC-70/SOT-323 package (supplier device package PG-SOT323-3-1), which is a small surface-mount package ideal for compact designs.

BAT17-06WE6327 Quick Information

Product Type: RF Schottky Diode
Canonical Name: Infineon Technologies BAT17-06WE6327 RF Schottky Diode, 4V, 130mA, SC-70/SOT-323
Subcategory: RF Diode

BAT17-06WE6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BAT17-06WE6327 Estimated Pricing

Qty Low High
2,443+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

BAT17-06WE6327 Features

  • Schottky diode pair with common anode configuration.
  • Rated for 4V reverse voltage and 130mA forward current.
  • Low capacitance of 0.75pF suitable for RF applications.
  • 150mW maximum power dissipation.
  • Operates up to 150°C junction temperature.

BAT17-06WE6327 Applications

  • Ideal for RF mixer and detector circuits.
  • Used in high-frequency signal detection.
  • Suitable for RF energy harvesting applications.

BAT17-06WE6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating of BAT17-06WE6327?

The reverse voltage rating is 4V.

What is the forward current rating of BAT17-06WE6327?

The forward current rating is 130mA.

What package is the BAT17-06WE6327 available in?

It is available in SC-70 and SOT-323 packages, with supplier device package PG-SOT323-3-1.

What is the diode configuration of the BAT17-06WE6327?

It is a Schottky diode with 1 pair common anode configuration.

What is the capacitance of the BAT17-06WE6327?

The capacitance is 0.75pF at 0V, 1MHz.

What is the maximum power dissipation of the BAT17-06WE6327?

The maximum power dissipation is 150mW.

What is the operating temperature range of the BAT17-06WE6327?

The junction temperature can reach up to 150°C.

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