BAT1504WH6327XTSA1 This is a silicon RF Schottky diode pair from Infineon Technologies, rated for 4V reverse voltage and 110mA forward current. It comes in a SOT323-3 package with low capacitance of 0.35pF.
Mfr Part #:

BAT1504WH6327XTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
This is a silicon RF Schottky diode pair from Infineon Technologies, rated for 4V reverse voltage and 110mA forward current. It comes in a SOT323-3 package with low capacitance of 0.35pF.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.22 - $0.52

BAT1504WH6327XTSA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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9,000 pcs
9000 pcs On Request 1 On Request On Request On Request On Request On Request

BAT1504WH6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Diode Type
Halogen Free
Industrial Grade
Operating Temperature
Power Dissipation (Max)
Storage Temperature
Supplier Device Package
Tape & Reel
Voltage

BAT1504WH6327XTSA1 Description

Short technical summary and product information.

The BAT15-04W is a series silicon RF Schottky diode pair from Infineon Technologies, designed for mixer and detector applications up to 12 GHz. It features low barrier height, low forward voltage, and low junction capacitance. The diode pair has a typical inductance of 1.4 nH and capacitance of 0.3 pF at 1 MHz. It is qualified for industrial applications per JEDEC47/20/22. The device is available in an industry-standard SOT323-3 package (2 mm x 2.1 mm x 0.9 mm) and is Pb-free, RoHS compliant, and halogen-free. Potential applications include sensor interfaces, telematic systems, compensators, and radar systems for industrial use.

BAT1504WH6327XTSA1 Quick Information

Product Type: Schottky Diode
Series: BAT15-04W
Canonical Name: Infineon Technologies BAT1504WH6327XTSA1 Schottky Diode, 4V, 110mA, SOT323-3
Subcategory: RF Diodes

BAT1504WH6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BAT1504WH6327XTSA1 Estimated Pricing

Qty Low High
1+ $0.52 $0.52
10+ $0.33 $0.33
100+ $0.26 $0.26
500+ $0.25 $0.25
1,000+ $0.24 $0.24
3,000+ $0.23 $0.23
6,000+ $0.22 $0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

BAT1504WH6327XTSA1 Features

  • Low capacitance of 0.35 pF typical.
  • Low inductance of 1.4 nH typical.
  • Rated for 4V reverse voltage maximum.
  • Maximum forward current of 110 mA.
  • Industry standard SOT323-3 package.

BAT1504WH6327XTSA1 Applications

  • Used in mixer and detector circuits up to 12 GHz.
  • Ideal for sensor interfaces in security systems.
  • Suitable for telematic and radar systems.
  • Applicable in compensator circuits.

BAT1504WH6327XTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage?

4V.

What is the maximum forward current?

110 mA.

What is the typical capacitance?

0.35 pF at 0V, 1MHz.

What is the typical inductance?

1.4 nH.

What is the package type?

SC-70, SOT-323 (supplier device package PG-SOT323).

What is the maximum power dissipation?

100 mW.

What is the maximum operating junction temperature?

150°C.

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