| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Frequency | |
| Inductance | |
| Tape & Reel |
The Infineon BAT1504RE6152HTSA1 is a silicon low barrier N-type RF Schottky diode pair with an integrated guard ring for over-voltage protection. Its low barrier height, low forward voltage, and low junction capacitance make it suitable for mixer and detector functions in applications operating at frequencies as high as 12 GHz.
Key electrical characteristics include a typical inductance of 1.5 nH and a typical capacitance of 0.27 pF at 1 MHz. The device is qualified for industrial applications according to JEDEC standards.
This diode pair is housed in an industry-standard SOT23-3 package, measuring 2.9 mm x 2.4 mm x 1 mm. It is Pb-free and RoHS compliant. Potential applications include satellite systems, low noise blocks for Ku bands, and security systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.82 | $0.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical inductance is 1.5 nH.
The typical capacitance is 0.27 pF at 1 MHz.
The device is suitable for applications with frequencies as high as 12 GHz.
It is supplied in the industry standard SOT23-3 package.
Yes, it is Pb-free and RoHS compliant.