| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Capacitance @ Vr, F | |
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| Halogen Free | |
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The Infineon BAT1502LRHE6327XTSA1 is a single silicon RF Schottky diode designed for mixer and detector applications up to 12 GHz. It features a low barrier height, low forward voltage, and a low junction capacitance of 0.2 pF typical at 1 MHz, enabling high-frequency performance in LiDAR and radar modules.
This diode supports a maximum reverse voltage of 4 V and a forward current of 110 mA, with a power dissipation of 100 mW. It is housed in a leadless SOD-882 package (TSLP-2-7) measuring 1 mm x 0.6 mm x 0.39 mm, compatible with surface mount assembly. The component is Pb-free, RoHS compliant, and halogen-free.
Designed for industrial applications and qualified per JEDEC47/20/22 standards, the BAT1502LRH includes an integrated guard ring for over-voltage protection. Its low inductance of 0.4 nH typical and small footprint make it suitable for high-frequency mixing and detection in compact RF systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.62 | $1.62 |
| 10+ | $1.02 | $1.02 |
| 100+ | $0.68 | $0.68 |
| 500+ | $0.53 | $0.53 |
| 1,000+ | $0.49 | $0.49 |
| 2,000+ | $0.45 | $0.45 |
| 5,000+ | $0.43 | $0.43 |
| 15,000+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 4 V.
The forward current rating is 110 mA.
It is supplied in a SOD-882 (TSLP-2-7) surface mount package measuring 1 mm x 0.6 mm x 0.39 mm.