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BAT1502LRHE6327XTSA1 Infineon BAT1502LRHE6327XTSA1 is a single silicon RF Schottky diode rated for 4V reverse voltage, 110mA forward current, and 100mW power dissipation in a SOD-882 package.
Mfr Part #:

BAT1502LRHE6327XTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BAT1502LRHE6327XTSA1 is a single silicon RF Schottky diode rated for 4V reverse voltage, 110mA forward current, and 100mW power dissipation in a SOD-882 package.
Total Stock: 13 pcs
$ Price Range: $0.36 - $1.62

BAT1502LRHE6327XTSA1 Available from 1 distributors

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BAT1502LRHE6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Diode Type
Forward Current (IF)
Halogen Free
Inductance (L) (Typical)
Junction Capacitance (Cj) (Nominal @ Vr=0 V, f=1 MHz)
Junction Capacitance (Cj) (Typical @ f=1 MHz)
Mounting Type
Operating Temperature
Package / Case
Package Body Size
Packaging Type
Power Dissipation (Max)
Reverse Voltage (VR)
Standard Package Quantity
Supplier Device Package
Termination Style
Voltage

BAT1502LRHE6327XTSA1 Description

Short technical summary and product information.

The Infineon BAT1502LRHE6327XTSA1 is a single silicon RF Schottky diode designed for mixer and detector applications up to 12 GHz. It features a low barrier height, low forward voltage, and a low junction capacitance of 0.2 pF typical at 1 MHz, enabling high-frequency performance in LiDAR and radar modules.

 

This diode supports a maximum reverse voltage of 4 V and a forward current of 110 mA, with a power dissipation of 100 mW. It is housed in a leadless SOD-882 package (TSLP-2-7) measuring 1 mm x 0.6 mm x 0.39 mm, compatible with surface mount assembly. The component is Pb-free, RoHS compliant, and halogen-free.

 

Designed for industrial applications and qualified per JEDEC47/20/22 standards, the BAT1502LRH includes an integrated guard ring for over-voltage protection. Its low inductance of 0.4 nH typical and small footprint make it suitable for high-frequency mixing and detection in compact RF systems.

BAT1502LRHE6327XTSA1 Quick Information

Product Type: RF Schottky Diode
Canonical Name: Infineon BAT1502LRH Schottky RF Diode, 4V Reverse Voltage, 110mA Forward Current, SOD-882
Subcategory: RF Mixer and Detector Diode

BAT1502LRHE6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BAT1502LRHE6327XTSA1 Estimated Pricing

Qty Low High
1+ $1.62 $1.62
10+ $1.02 $1.02
100+ $0.68 $0.68
500+ $0.53 $0.53
1,000+ $0.49 $0.49
2,000+ $0.45 $0.45
5,000+ $0.43 $0.43
15,000+ $0.36 $0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

BAT1502LRHE6327XTSA1 Features

  • 4V reverse voltage and 110mA forward current.
  • Low junction capacitance of 0.2 pF typical.
  • Low inductance of 0.4 nH typical.
  • Compact SOD-882 surface mount package.
  • RoHS compliant and halogen-free.

BAT1502LRHE6327XTSA1 Applications

  • RF mixer and detector circuits up to 12GHz.
  • LiDAR system receivers and radar modules.
  • High-frequency signal detection and mixing.

BAT1502LRHE6327XTSA1 FAQs

3 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the BAT1502LRHE6327XTSA1?

The maximum reverse voltage is 4 V.

What is the forward current rating of this Schottky diode?

The forward current rating is 110 mA.

What package does the BAT1502LRHE6327XTSA1 come in?

It is supplied in a SOD-882 (TSLP-2-7) surface mount package measuring 1 mm x 0.6 mm x 0.39 mm.

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