| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Dimensions | |
| Frequency | |
| Inductance | |
| Lead Style | |
| Mounting Type |
The Infineon BAT15-04R is a silicon low barrier N-type RF Schottky diode pair with an integrated guard ring for over-voltage protection. Its low barrier height, low forward voltage, and low junction capacitance make it suitable for mixer and detector functions in applications operating at frequencies up to 12 GHz.
Key electrical characteristics include a typical inductance of 1.5 nH and a typical capacitance of 0.27 pF at 1 MHz. The device is housed in an industry-standard SOT23-3 package, measuring 2.9 mm x 2.4 mm x 1 mm.
This component is qualified for industrial applications according to JEDEC standards. Potential applications include satellite systems, low noise blocks for Ku bands, and security systems. The product is Pb-free and RoHS compliant.
It is an ESD sensitive device and requires careful handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical inductance of the BAT15-04R is 1.5 nH.
The typical capacitance of the BAT15-04R at 1 MHz is 0.27 pF.
The BAT15-04R is suitable for applications with frequencies as high as 12 GHz.
The BAT15-04R is supplied in the industry standard SOT23-3 package.
The BAT15-04R is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BAT15-04R is 1 Unlimited.