| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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128,000 pcs
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128000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Capacitance @ Vr, F | |
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| Reverse Recovery Time (trr) | |
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| Technology |
The BASH19MX2WT5G from On Semiconductor is a small signal diode with a maximum reverse voltage of 120V and an average rectified current of 200mA. It offers a fast switching speed with a reverse recovery time of 50ns. The forward voltage is a maximum of 1.25V at 200mA, and the reverse leakage current is 100nA at 100V. The diode has a junction capacitance of 3pF at 0V and 1MHz.
This component is housed in a compact 2-XDFN package, specifically a 2-X2DFNW (1x0.6) supplier device package, suitable for surface mount applications with wettable flank termination. It operates within a wide temperature range of -55°C to 175°C. The technology used is standard, making it a reliable choice for general-purpose rectification and switching applications where space is a constraint.
Key specifications include its 120V reverse voltage rating and 200mA forward current capability. The 50ns reverse recovery time indicates its suitability for high-frequency switching circuits. The low leakage current of 100nA at 100V ensures efficient operation. The surface mountable 2-XDFN package is designed for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120V.
200mA.
50ns.
1.25V.
-55°C to 175°C.
2-XDFN with supplier device package 2-X2DFNW (1x0.6) and surface mount wettable flank mounting.
3pF at 0V, 1MHz.