| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Forward Current | |
| Diode Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Current | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Termination Style | |
| Thermal Resistance |
The BAS86 is a planar Schottky barrier diode manufactured by NXP Semiconductors. It is designed with an integrated protection ring for static discharge protection. This diode is suitable for ultra high-speed switching, voltage clamping, protection circuits, and blocking diode applications.
Key electrical characteristics include a continuous reverse voltage rating of 50V and a continuous forward current of 200mA. The forward voltage is low, with a maximum of 300mV at 0.1mA and up to 900mV at 100mA. The reverse recovery time is a rapid 4ns.
Encapsulated in a hermetically sealed SOD80C glass SMD package, the BAS86 is designed for automatic placement and can withstand immersion soldering. Its operating ambient temperature range is -65°C to +125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous reverse voltage for the BAS86 is 50V.
The maximum continuous forward current for the BAS86 is 200mA.
The forward voltage at 1mA for the BAS86 is a maximum of 380mV.
The reverse recovery time for the BAS86 is 4ns.
The diode capacitance of the BAS86 at 1MHz and 1V reverse voltage is a maximum of 8pF.
The BAS86 diode is supplied in a hermetically sealed SOD80C glass SMD package.