| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,000 pcs
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13000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,179 pcs
|
2179 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BAS85 is a planar Schottky barrier diode designed for ultra high-speed switching, voltage clamping, protection circuits, and blocking diode applications. It features a low forward voltage and a high breakdown voltage, with an integrated guard ring for stress protection.
This diode is encapsulated in a hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package. It is suitable for automatic placement and can withstand immersion soldering, making it a robust choice for various electronic designs.
Key electrical characteristics include a maximum forward current of 200 mA and a reverse voltage rating of 30 V. The forward voltage is typically 800 mV at 100 mA, with lower values at reduced currents. The reverse current is very low, at 2.3 μA maximum at 25 V.
The device operates within an ambient temperature range of -65 °C to +125 °C and has a junction temperature limit of 125 °C. Its thermal resistance from junction to ambient in free air is 320 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward current for the BAS85 diode is 200 mA.
The reverse voltage rating of the BAS85 diode is 30 V.
The typical forward voltage at 100 mA for the BAS85 diode is 800 mV.
The BAS85 diode is supplied in a SOD80C package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.