| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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245 pcs
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245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAS70-07 is a Silicon Schottky Diode manufactured by NXP Semiconductors. This general-purpose diode is designed for high-speed switching applications, circuit protection, voltage clamping, and high-level detecting and mixing.
Key electrical characteristics include a maximum reverse voltage of 70V and a maximum forward current of 70mA. It has a typical forward voltage of 600mV at 10mA and a maximum capacitance of 2pF at 1MHz and 0V reverse bias. The diode also exhibits a low forward resistance of 34 Ohms at 10mA and 10kHz.
This component is qualified according to AEC-Q101. It operates within a temperature range of -55°C to 125°C and has a junction temperature rating of 150°C. The storage temperature range is -55°C to 150°C.
The BAS70-07 is supplied in a SOT323 surface-mount package. Its Pb-free (RoHS compliant) package and suitability for high-speed applications make it a versatile choice for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
70V maximum.
70mA maximum.
375mV maximum.
705mV maximum.
2pF maximum at VR=0V, f=1MHz.
SOT323 surface mount.
-55 to 125°C.