| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,388 pcs
|
9388 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,168 pcs
|
2168 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,168 pcs
|
2168 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Diode Capacitance | |
| Forward Current | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature Range | |
| Reverse Current | |
| Storage Temperature | |
| Tape & Reel |
The Infineon BAS70-04W is a Silicon Schottky Diode suitable for high-speed switching, circuit protection, and voltage clamping applications. It offers a maximum reverse voltage of 70V and a maximum forward current of 70mA.
Key electrical characteristics include a breakdown voltage of 70V at 10 µA, a low reverse leakage current of 0.1 µA at 50V, and a typical forward voltage of 375mV at 1mA, 705mV at 10mA, and 880mV at 15mA. The diode capacitance is a maximum of 2pF at 1MHz and 0V reverse bias, with a typical forward resistance of 34 Ω at 10mA and 10kHz.
This component is qualified according to AEC-Q101 and comes in a Pb-free package. It operates within a temperature range of -55 to 125 °C and has a junction temperature rating of 150 °C.
The BAS70-04W is supplied in a SOT-323 surface mount package, making it suitable for compact designs. Its thermal resistance from junction to soldering point is typically 1.4 K/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
70V.
70mA.
375mV at 1mA, 705mV at 10mA, 880mV at 15mA.
-55°C to 125°C.
SOT-323, surface mount.
2pF maximum at 0V bias.
250mW at 48°C case temperature.