| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,730 pcs
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2730 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BAS516 is a high-speed switching diode encapsulated in an ultra-small SOD523 (SC-79) surface-mounted device (SMD) plastic package. This diode is designed for high-speed switching applications and general-purpose switching.
Key electrical characteristics include a reverse voltage (VR) of up to 100 V and a repetitive peak reverse voltage (VRRM) also up to 100 V. The high switching speed is demonstrated by a reverse recovery time (trr) of 4 ns under specific test conditions (IF = 10 mA, IR = 10 mA, RL = 100 Ω, IR(meas) = 1 mA, Tamb = 25 °C). The forward current (IF) is rated up to 250 mA at 25 °C ambient temperature.
With a low leakage current and low capacitance, the BAS516 is suitable for various electronic circuits requiring fast response times. The device operates over a wide ambient temperature range from -65 °C to 150 °C, with a junction temperature limit of 150 °C. The total power dissipation is 500 mW at a solder point temperature of 90 °C.
The small SMD plastic package makes it ideal for space-constrained applications. The diode has a cathode and an anode, with the cathode typically marked with a '6'.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VR) for the BAS516 diode is 100 V.
The reverse recovery time (trr) for the BAS516 diode is a maximum of 4 ns.
The maximum forward current (IF) for the BAS516 diode is 250 mA at 25 °C.
The BAS516 diode is supplied in a SOD523 (SC-79) surface-mounted device (SMD) plastic package.
The BAS516 diode is used for high-speed switching and general-purpose switching applications.