| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30,865 pcs
|
30865 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
8,212 pcs
|
8212 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The NXP Semiconductors BAS416 is an epitaxial, medium-speed switching diode designed for low-leakage current applications. Encapsulated in a compact SOD323 SMD plastic package, this diode offers a continuous reverse voltage of up to 75V and a repetitive peak reverse voltage of 85V.
Key electrical characteristics include a maximum forward current of 200 mA and a typical forward voltage of 1.1V at 50 mA. The reverse current is notably low, typically 0.003 nA at 75V and 25°C, making it suitable for sensitive applications. Its switching time is typically 0.8 µs.
The diode is housed in a SOD323 package, a surface-mounted type with a body measuring 1.7 mm x 1.25 mm x 0.95 mm and a pitch of 1.3 mm. Thermal considerations include a total power dissipation of 250 mW at 25°C ambient temperature and a junction temperature up to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage (VRRM) for the BAS416 is 85 V.
The typical forward voltage (VF) of the BAS416 at 50 mA and 25°C is 1.1 V.
The typical reverse recovery time (trr) for the BAS416 is 0.8 µs.
The BAS416 diode is supplied in a SOD323 surface-mount package.
The typical reverse current (IR) of the BAS416 is 0.003 nA at 75V and 25°C.