| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,067 pcs
|
7067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Diode Capacitance | |
| Forward Current | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature Range | |
| Reverse Current | |
| Storage Temperature | |
| Tape & Reel |
The Infineon BAS40-05W is a Silicon Schottky Diode suitable for various applications including general-purpose high-speed switching, circuit protection, voltage clamping, and high-level detecting and mixing. It is qualified according to AEC Q101.
Key electrical characteristics include a maximum reverse voltage of 40V and a maximum forward current of 120mA. The diode exhibits a maximum forward voltage of 380mV at 1mA, 500mV at 10mA, and 1000mV at 40mA. Its reverse leakage current is a maximum of 1µA at 30V. The diode capacitance is typically 3pF at 1MHz and 0V reverse voltage, with a differential forward resistance of typically 10 Ohms at 10mA and 10kHz. The charge carrier lifetime is a maximum of 100ps.
This device operates within a temperature range of -55°C to 150°C and has a junction temperature of 150°C. The total power dissipation for the BAS40-05W is 250mW at a solder point temperature of up to 98°C. The junction-to-soldering point thermal resistance is a maximum of 125 K/W.
The BAS40-05W is supplied in a SOT323 surface-mount package. It is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
120 mA.
380 mV maximum at 1 mA, 1000 mV maximum at 40 mA.
Maximum 100 ps at IF = 25 mA.
SOT323 surface-mount package.
-55 to 150 °C.
Yes, the device is Pb-free as verified from the Infineon datasheet.