| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
540 pcs
|
540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
189 pcs
|
189 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
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| Configuration | |
| Diode Capacitance | |
| Forward Current | |
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The BAS40-05W is a Silicon Schottky Diode manufactured by NXP Semiconductors, designed for general-purpose applications requiring high-speed switching. This diode features a maximum reverse voltage of 40V and a forward current of 120mA.
Key electrical characteristics include a typical forward voltage of 600mV at 1mA and 720mV at 10mA, with a maximum of 1000mV at 40mA. The diode capacitance is typically 3pF at 1MHz and 0V reverse voltage. Its differential forward resistance is typically 10 Ohms at 10mA and 10kHz, and the charge carrier life time is a maximum of 100ps.
This component is qualified according to AEC-Q101 and comes in a Pb-free package. It is suitable for applications such as circuit protection, voltage clamping, and high-level detecting and mixing.
The BAS40-05W is supplied in a SOT323 surface mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 40 V.
The maximum forward current is 120 mA.
The typical forward voltage at 10mA is 720 mV.
The diode capacitance is typically 3 pF.
The BAS40-05W is available in a SOT323 package.
Yes, the BAS40-05W is RoHS3 Compliant.