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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,054 pcs
|
3054 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,054 pcs
|
3054 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Forward Current (Maximum @ double diode loaded) | |
| Continuous Forward Current (Maximum @ single diode loaded) | |
| Continuous Reverse Voltage | |
| Forward Voltage (Maximum @ IF = 10 mA) | |
| Forward Voltage (Maximum @ IF = 100 mA) | |
| Forward Voltage (Maximum @ IF = 200 mA) | |
| Forward Voltage (Maximum @ IF = 50 mA) | |
| Forward Voltage (Maximum @ IF=400 mA) | |
| Junction Temperature | |
| Mounting Type | |
| Non Repetitive Peak Forward Current (Maximum @ square wave; Tj = 25 °C; t = 1 µs) | |
| Non Repetitive Peak Forward Current (Maximum @ square wave; Tj = 25 °C; t = 100 µs) | |
| Package Type | |
| Repetitive Peak Forward Current | |
| Repetitive Peak Reverse Current | |
| Repetitive Peak Reverse Energy (tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C) | |
| Repetitive Peak Reverse Voltage | |
| Reverse Avalanche Breakdown Voltage (IR = 1 mA) | |
| Reverse Current (Maximum @ VR = 90 V; Tj = 150 °C) | |
| Reverse Current (Maximum @ VR=90 V) | |
| Storage Temperature | |
| Switching Speed | |
| Termination Style | |
| Total Power Dissipation (Tamb = 25 °C; mounted on FR4 PCB) |
The BAS35,215 is a general purpose controlled avalanche double diode manufactured by NXP Semiconductors. It consists of two diodes with a common anode, encapsulated in a small SOT23 surface-mount package. This device is designed for general purpose switching applications in surface mounted circuits.
Key electrical specifications include a repetitive peak reverse voltage of 110V, continuous reverse voltage of 90V, and continuous forward current of 250mA when a single diode is loaded (150mA when both diodes are loaded). The forward voltage is typically 750mV at 10mA and 1V at 200mA. The diode offers fast switching with a maximum reverse recovery time of 50ns. It also features controlled avalanche capability with a breakdown voltage range of 120V to 170V at 1mA.
The device is mounted on an FR4 PCB for thermal dissipation, with a maximum total power dissipation of 250mW at 25°C ambient. The junction temperature range is -65°C to +150°C. The SOT23 package is suitable for automated assembly and space-constrained designs.
The maximum repetitive peak reverse voltage is 110V.
The maximum continuous forward current is 250mA when a single diode is loaded, and 150mA when both diodes are loaded.
The forward voltage is 750mV at 10mA, 840mV at 50mA, 900mV at 100mA, 1V at 200mA, and 1.25V at 400mA.
The maximum switching speed is 50ns.
It is available in a SOT23 surface-mount package.
The reverse avalanche breakdown voltage is between 120V and 170V at 1mA.
The maximum reverse current is 100nA at 90V, and 100µA at 150°C.