BAS21AHT1G

The BAS21AHT1G is a low leakage switching diode designed and manufactured by On Semiconductor (onsemi). It is a standard recovery diode optimized for general purpose switching applications where low leakage current is critical. With a maximum continuous reverse voltage of 250V and forward current of 200mA, it provides reliable performance in a variety of circuits.

The diode exhibits a maximum forward voltage of 1.25V at 200mA forward current and a typical reverse recovery time of 50ns, enabling fast switching. The reverse leakage current is limited to 40nA at 200V reverse voltage, and the diode capacitance is typically 5pF at 0V, minimizing parasitic effects. The device can handle a peak forward surge current of 625mA and has a total power dissipation of 200mW on an FR-5 board.

The operating temperature range spans from -55°C to 150°C, making it suitable for harsh environments. The junction-to-ambient thermal resistance is 635°C/W. The BAS21AHT1G is supplied in an SOD-323 surface mount package (SC-76 case), which is ideal for compact designs. It is lead-free, halogen-free, and RoHS compliant.

This diode is commonly used in high-speed switching, reverse polarity protection, and clamping circuits. Its low leakage and fast recovery characteristics also make it suitable for signal processing and automotive applications where reliability is paramount.