| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,329 pcs
|
7329 pcs | On Request | 1 | On Request | On Request | 1039 | On Request | On Request |
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The Vishay Semiconductors BAS19-V is a high-voltage, small signal switching diode designed for fast switching applications. It features a silicon epitaxial planar construction and is housed in a compact SOT-23 package, making it well-suited for automatic insertion processes.
Key electrical characteristics include a repetitive peak reverse voltage of up to 120V for the BAS19-V variant, a non-repetitive peak forward current of 2.5A (t=1µs), and a maximum average forward rectified current of 200mA. The diode also offers a power dissipation of 250mW and a thermal resistance junction to ambient air of 430°C/W.
This diode is part of a series that includes variants with different reverse voltage ratings and is also available in other case styles such as SOD-123, Mini-MELF, DO-35, and SOD-323. The AEC-Q101 qualification indicates its suitability for automotive applications.
Mechanical data specifies the case as SOT-23 with a weight of approximately 8.8 mg. Packaging options include tape and reel configurations with quantities of 3K or 10K units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage for the BAS19-V is 120 V.
The non-repetitive peak forward current for the BAS19-V is 2.5 A at t = 1 μs.
The BAS19-V diode is supplied in a SOT-23 case.
The maximum average forward rectified current is 200 mA.
The power dissipation is 250 mW.