BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,525 pcs
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2525 pcs | On Request | 1 | On Request | On Request | 2019+ | On Request | On Request |
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| Manufacturer Name | |
| Tape & Reel |
The ON Semiconductor BAS16XV2T1G is a single silicon junction switching diode designed for surface mounting. It comes in a compact SOD-523 package, making it suitable for space-constrained applications.
Key electrical characteristics include a maximum forward current of 200 mA and a maximum forward voltage of 1.25 V at 200 mA. The diode can withstand a peak reverse repetitive voltage of up to 100 V. It also features a peak non-repetitive forward surge current rating of 4 A and a typical reverse recovery time of 6 ns.
With a maximum power dissipation of 200 mW, the BAS16XV2T1G operates across a wide temperature range from -55°C to 150°C. It is qualified to the AEC-Q101 automotive standard.
This component is ideal for general-purpose switching applications where reliability and performance are critical. Its small footprint and robust specifications make it a versatile choice for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward current for the BAS16XV2T1G is 200 mA.
The peak reverse repetitive voltage rating for the BAS16XV2T1G is 100 V.
The maximum forward voltage for the BAS16XV2T1G is 1.25 V.
The BAS16XV2T1G is supplied in a SOD-523 package.
The operating temperature range for the BAS16XV2T1G is from -55°C to 150°C.
Yes, the BAS16XV2T1G is qualified to the AEC-Q101 automotive standard.