BAS116GWJ BAS116GWJ is a low leakage switching diode in a SOD-123 SMD package. It features 75V reverse voltage, 215mA forward current, and 0.8 µs typical reverse recovery time.
Mfr Part #:

BAS116GWJ

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
BAS116GWJ is a low leakage switching diode in a SOD-123 SMD package. It features 75V reverse voltage, 215mA forward current, and 0.8 µs typical reverse recovery time.
Total Stock: 839 pcs

BAS116GWJ Available from 2 distributors

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BAS116GWJ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Capacitance @ Vr, F
Current
Mounting Type
Number of Pins
Operating Temperature
Package / Case
Qualification
Repetitive Peak Reverse Voltage
Reverse Current (VR=75V, pulsed, Tj=25°C)
Reverse Recovery Time (trr)
Reverse Voltage
Speed
Storage Temperature
Supplier Device Package
Technology
Termination Style
Thermal Resistance (Junction to Ambient) (Maximum @ FR 4 PCB 1 cm² cathode pad)
Thermal Resistance (Junction to Ambient) (Maximum @ FR 4 PCB standard footprint)
Thermal Resistance (junction to solder point)
Total Power Dissipation (Maximum @ Tamb≤25 °C, FR 4 PCB 1 cm² cathode pad)
Total Power Dissipation (Maximum @ Tamb≤25 °C, FR 4 PCB standard footprint)
Voltage

BAS116GWJ Description

Short technical summary and product information.

The BAS116GWJ is a low leakage switching diode designed for general-purpose switching and low-leakage applications. It is housed in a small SOD-123 surface-mount plastic package, making it suitable for compact PCB designs.

 

Key electrical characteristics include a maximum repetitive peak reverse voltage of 85V, a maximum reverse voltage of 75V, and a maximum forward current of 215mA. The diode offers a typical reverse recovery time of 0.8 µs and a low typical reverse leakage current of 0.003 nA at 75V. Forward voltage is specified at 1.25V maximum at 150mA.

 

The device is AEC-Q101 qualified, supporting automotive applications. It features a low capacitance of 2 pF at 0V and 1MHz. Thermal characteristics include a maximum junction temperature of 150°C and thermal resistance from junction to ambient of 350 K/W on a standard FR4 footprint.

BAS116GWJ Quick Information

Product Type: Switching Diode
Series: BAS116
Canonical Name: BAS116GWJ Low Leakage Switching Diode
Subcategory: Switching Diode

BAS116GWJ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BAS116GWJ Features

  • Low leakage current of 3 pA typical.
  • Fast switching with 0.8 µs recovery time.
  • AEC-Q101 qualified for automotive use.
  • Surface mount SOD-123 package.
  • Low capacitance of 2 pF.

BAS116GWJ Applications

  • Used in low-leakage current applications.
  • Suitable for general-purpose switching circuits.
  • Ideal for automotive electronics modules.

BAS116GWJ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the BAS116GWJ?

The maximum reverse voltage is 75V.

What is the forward current rating?

The maximum forward current is 215 mA.

What is the forward voltage drop?

The forward voltage is 1.25 V maximum at 150 mA.

What is the reverse recovery time?

The typical reverse recovery time is 0.8 µs, with a maximum of 3 µs.

What package is the BAS116GWJ available in?

It is available in a SOD-123 surface-mount package.

Is the BAS116GWJ qualified for automotive applications?

Yes, it is AEC-Q101 qualified.

What is the operating temperature range?

The maximum operating junction temperature is 150°C.

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