| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,000 pcs
|
45000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The Infineon BAS116E6327HTSA1 is a general purpose silicon diode designed for low-leakage and medium-speed switching applications. It features a maximum reverse voltage of 80V and a peak reverse voltage of 85V, with a forward current rating of 250mA. The diode offers a low reverse current of 5nA at 75V and 25°C, and a typical forward voltage of 900mV at 1mA.
This device is qualified to AEC Q101 automotive standards and is RoHS compliant. It is housed in a compact SOT23 surface mount package (PG-SOT23), making it suitable for space-constrained designs. The junction temperature range extends to 150°C, and the storage temperature range is -65°C to 150°C.
Typical applications include low-leakage circuits, signal switching, and general purpose rectification in automotive and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.26 | $0.26 |
| 30,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 80V, with a peak reverse voltage of 85V.
The maximum forward current is 250mA.
The forward voltage at 1mA is 900mV maximum.
The reverse recovery time is 0.6µs typical and 1.5µs maximum.
It is available in a SOT23 surface mount package (PG-SOT23).
Yes, it is RoHS3 compliant and Pb-free.
Yes, it is qualified according to AEC Q101.