| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,960 pcs
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2960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAS116,215 from NXP Semiconductors is an epitaxial medium-speed switching diode characterized by its low leakage current. Encapsulated in a compact SOT-23 plastic SMD package, this diode is suitable for surface-mounted circuits requiring minimal current leakage.
Key electrical specifications include a continuous reverse voltage of up to 75V and a repetitive peak forward current of 500mA. The typical forward voltage is 1.25V at 150mA, and the typical reverse recovery time is 0.8µs, with a maximum surge current of 4.5A. It operates within a temperature range of -55°C to 150°C.
This component is designed for applications where low leakage is critical. Its SOT-23 package facilitates easy integration into surface-mounted designs, making it a versatile choice for various electronic assemblies.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous reverse voltage is 75V.
The typical forward current is 215mA, with a maximum of 200mA.
The typical reverse recovery time is 0.8µs.
The BAS116,215 is available in a SOT-23 surface-mount package.
The operating temperature range is -55°C to 150°C.
The typical forward voltage is 1.25V at 150mA.