| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,050 pcs
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9050 pcs | On Request | 1 | On Request | On Request | 1338+ | On Request | On Request |
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The BAR65-02VH6327 is a silicon PIN diode from Infineon Technologies, designed for low-loss transmit-receive switching in mobile communication systems and TV tuner band switching. This single diode offers a maximum reverse voltage of 30V and a forward current rating of 100mA, with a total power dissipation of 250mW. Electrical characteristics include a typical forward voltage of 0.93V at 100mA and a low forward resistance of 0.56 Ohms at 10mA, 100MHz. The device exhibits low capacitance of 0.4pF typical at 3V and 1MHz, making it suitable for high-frequency applications. The diode is housed in a leadless SC-79 surface mount package (PG-SC79-2-1) with dimensions typical for compact RF designs. It is RoHS compliant and operates over a temperature range of -55°C to 125°C. Applications include series and shunt configurations in RF switches, attenuators, and phase shifters.
30V.
100mA.
0.93V, with a maximum of 1V.
80ns.
SC-79 surface mount package (PG-SC79-2-1).
0.4pF, with a maximum of 0.8pF.
Typical 0.56 Ohm, maximum 0.9 Ohm.