| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,588 pcs
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3588 pcs | On Request | 1 | On Request | On Request | 1733+ | On Request | On Request |
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The BAR6305WH6327XTSA1 is a PIN diode from Infineon Technologies configured as a common cathode pair. It is designed for RF applications requiring low capacitance and low series resistance. The diode is rated for a maximum reverse voltage of 50V and a maximum forward current of 100mA, with a power dissipation limit of 250mW.
Electrical characteristics include a typical capacitance of 0.3pF at 5V reverse bias and 1MHz, and a typical forward resistance of 1 ohm at 10mA forward current and 100MHz. These parameters make it well-suited for RF switching, attenuator, and limiter circuits.
The device is offered in multiple package options: TO-236-3, SC-59, and SOT-23-3, with the supplier package designated as PG-SOT23. It is a surface-mount component with an operating junction temperature range up to 150°C.
The maximum reverse voltage is 50V.
The maximum forward current is 100 mA.
It is available in TO-236-3, SC-59, SOT-23-3, and PG-SOT23 packages.
Typical capacitance is 0.3 pF at 5V reverse bias and 1MHz.
Typical forward resistance is 1 ohm at 10mA forward current and 100MHz.
Maximum power dissipation is 250 mW.
Maximum junction temperature is 150°C.