| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,650 pcs
|
1650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| SVHC Present |
The Infineon BAR63-04E6327 is a silicon PIN diode suitable for RF switching applications. It features a minimum breakdown voltage of 50V and a maximum diode capacitance of 0.3 pF. The nominal minority carrier lifetime is 0.075 us, and the maximum power dissipation limit is 0.25W.
This diode operates within the S-band frequency range and is configured in a series-connected, center-tapped arrangement with two elements. It is designed for surface mounting with gull wing terminals and a rectangular plastic/epoxy package.
The BAR63-04E6327 is RoHS3 compliant and lead-free, making it suitable for modern electronic designs. Its status is active, indicating ongoing availability for new designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 50 V.
The maximum diode capacitance is 0.3 pF.
The nominal minority carrier lifetime is 0.075 us.
The maximum power dissipation limit is 0.25 W.
This diode operates in the S BAND frequency range.
The primary application is SWITCHING.
It is configured as SERIES CONNECTED, CENTER TAP, 2 ELEMENTS.