| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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959,900 pcs
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959900 pcs | On Request | 1 | On Request | On Request | 0342+ | On Request | On Request |
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The BAR63-02LE6327 is a single PIN diode manufactured by Infineon Technologies, designed for RF switching and attenuation applications. It features a maximum reverse voltage of 50V and a maximum forward current of 100mA, with a typical capacitance of 0.3pF at 5V and 1MHz, ensuring low signal distortion in high-frequency circuits.
This diode is housed in a SOD-882 surface mount package (also known as PG-TSLP-2-1), enabling compact PCB layouts. It can dissipate up to 250mW of power and operates at a maximum junction temperature of 150°C, suitable for demanding environments. The surface mount termination style allows for automated assembly.
Typical applications include RF signal routing, antenna switching, and variable attenuators in wireless infrastructure and consumer electronics. The low capacitance and fast switching characteristics make it a practical choice for high-frequency designs up to several gigahertz.
The maximum reverse voltage is 50V.
The maximum forward current is 100 mA.
It is available in SOD-882 surface mount package (supplier device package PG-TSLP-2-1).
The typical capacitance is 0.3 pF at Vr=5V and f=1MHz.
The maximum power dissipation is 250 mW.
The maximum junction temperature is 150°C.