| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,560 pcs
|
1560 pcs | On Request | 1 | On Request | On Request | 1970-01-01 00:17:08 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Capacitance @ Vr, F | |
| Charge Carrier Life Time | |
| Configuration | |
| Current | |
| Diode Capacitance | |
| Diode Type | |
| Forward Current | |
| Forward Resistance | |
| Forward Voltage | |
| I-region Width | |
| Junction Temperature | |
| Lead Inductance | |
| Operating Temperature | |
| Operating Temperature Range | |
| Package / Case | |
| Power Dissipation (Max) | |
| Resistance @ If, F | |
| Reverse Current | |
| Reverse Voltage | |
| Standard Packing (Reel 180 mm) | |
| Standard Packing (Reel 330 mm) | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Thermal Resistance (Junction to Soldering Point) | |
| Total Power Dissipation | |
| Voltage |
The BAR61 from Infineon Technologies is a silicon PIN diode configured as a PI element, optimized for RF switching and attenuator applications at frequencies above 10 MHz. It provides low distortion and long-term stability of electrical characteristics.
Key electrical specifications include a maximum reverse voltage of 100 V, forward current of 140 mA, and total power dissipation of 250 mW at 65 °C. Forward voltage is 1.25 V max at 100 mA, and reverse current is 1000 nA max at 100 V. The diode exhibits a low capacitance of 0.5 pF max at 50 V and 1 MHz, and a forward resistance of 12 Ω max at 10 mA and 100 MHz. Charge carrier lifetime is typically 1000 ns, and the I-region width is 146 µm.
The BAR61 is qualified according to AEC Q101 and is RoHS3 compliant with a Pb-free package. It operates over a junction temperature range of -55 to 125 °C and can be stored from -55 to 150 °C. The device is supplied in a PG-SOT143-4 surface-mount package (TO-253-4) with standard reel packing options of 3000 or 10000 pieces per reel.
This diode is suitable for automotive and industrial RF designs where reliable switching and attenuation performance is required.
100 V.
140 mA.
1.25 V maximum.
PG-SOT143-4 (TO-253-4).
0.5 pF maximum at VR = 50 V, f = 1 MHz.
12 Ω maximum at IF = 10 mA, f = 100 MHz.
Yes, qualified according to AEC Q101.