| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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351,000 pcs
|
351000 pcs | On Request | 1 | On Request | On Request | 0402+ | On Request | On Request |
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The Infineon BAR50-03WE6327 is a silicon PIN diode optimized for current-controlled RF resistor applications in switching and attenuating circuits. It operates over a frequency range from 10 MHz to 6 GHz and is especially useful as an antenna switch in mobile communication systems.
Key electrical characteristics include a maximum reverse voltage of 50V and a forward current of 100mA. The diode features very low forward resistance (3 Ω typical at 10 mA) and extremely low capacitance (0.15 pF typical at 0 V, 1–1.8 GHz). Insertion loss is -0.27 dB at 10 mA and 1.8 GHz, while isolation reaches -20 dB at 1.8 GHz. The device also exhibits low harmonics performance.
The BAR50-03WE6327 is supplied in a surface-mount SOD-323 (SC-76) package with marking 'A'. It has a lead inductance of 1.4 nH and a maximum thermal resistance of 135 K/W from junction to soldering point. Total power dissipation is 250 mW.
Designed for reliable operation, the diode supports an operating temperature range of -55°C to +125°C and storage temperature range of -55°C to +150°C. It is ideal for RF switching, attenuators, and antenna diversity applications in mobile and wireless infrastructure.
| Qty | Low | High |
|---|---|---|
| 7,493+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
100mA.
Typical 0.95V, maximum 1.1V.
Surface-mount SOD-323 (SC-76).
0.15pF at 1-1.8GHz.
3Ω.
-55°C to 125°C.