BAR151E6327HTSA1 RF PIN diode from Infineon, 100V reverse voltage, 140mA forward current, 250mW power dissipation. Suitable for RF switching and attenuation applications.
Mfr Part #:

BAR151E6327HTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
RF PIN diode from Infineon, 100V reverse voltage, 140mA forward current, 250mW power dissipation. Suitable for RF switching and attenuation applications.
✓ Total Stock: 1,834 pcs

BAR151E6327HTSA1 Available from 1 distributor

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BAR151E6327HTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Capacitance
Capacitance @ Vr, F
Current
Diode Type
Forward Voltage
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Resistance @ If, F
Reverse Current
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Voltage

BAR151E6327HTSA1 Description

Short technical summary and product information.

The Infineon BAR151E6327HTSA1 is a silicon PIN diode designed for RF applications. It features a common cathode configuration with two diodes in a single PG-SOT23 surface mount package. Key electrical specifications include a reverse voltage rating of 100 V, forward current of 140 mA, and total power dissipation of 250 mW. The diode exhibits low capacitance of 0.5 pF at 50 V and 1 MHz, and a forward resistance of 12 ohms at 10 mA and 100 MHz. Typical forward voltage is 1.05 V at 100 mA, with a maximum of 1.25 V. The charge carrier lifetime is typically 700 ns. The device is qualified according to AEC Q101 and is RoHS compliant. It is suitable for RF switch and attenuator circuits operating above 10 MHz. The PG-SOT23 package is surface mount with gull wing leads, supplied in tape and reel packaging with 3000 pieces per reel.

BAR151E6327HTSA1 Quick Information

Product Type: RF PIN Diode
Series: BAR15-1
Canonical Name: Infineon BAR151E6327HTSA1 Silicon PIN Diode, 100V, 140mA, PG-SOT23
Subcategory: RF Diodes

BAR151E6327HTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BAR151E6327HTSA1 Features

  • PIN diode with common cathode configuration.
  • Rated for 100V reverse voltage.
  • Forward current up to 140 mA.
  • Low capacitance of 0.5 pF at 50V.
  • Surface mount PG-SOT23 package.

BAR151E6327HTSA1 Applications

  • Ideal for RF switch circuits.
  • Used in RF attenuator designs.
  • Suitable for frequencies above 10 MHz.
  • Common cathode pair for balanced designs.

BAR151E6327HTSA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating of the BAR151E6327HTSA1?

The reverse voltage rating is 100 V.

What is the maximum forward current?

The maximum forward current is 140 mA.

What is the forward voltage at 100 mA?

The typical forward voltage is 1.05 V, with a maximum of 1.25 V at 100 mA.

What package is the BAR151E6327HTSA1 available in?

It is available in a PG-SOT23 surface mount package.

What is the diode capacitance at 50 V?

The maximum capacitance is 0.5 pF at 50 V and 1 MHz.

What is the operating temperature range?

The junction temperature is rated up to 150°C, with an operating temperature range of -55°C to 125°C.

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