| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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75,000 pcs
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75000 pcs | On Request | 1 | On Request | On Request | 0540+ | On Request | On Request |
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The BAR 88-099LRH E6327 is a dual independent PIN diode from Infineon Technologies, designed for RF applications. It features a reverse voltage rating of 80 V and a forward current of 100 mA. The diode has a low forward resistance of 600 mOhm typical at 10 mA and 100 MHz, and a low diode capacitance of 0.4 pF maximum at 1 V and 1 MHz. These characteristics make it suitable for low current antenna switches and other RF switching circuits.
The device is housed in a compact 4-XFDFN package with a supplier package of PG-TSLP-4-7, suitable for surface mount assembly. The operating junction temperature is up to 150°C, and the maximum power dissipation is 250 mW. The diode is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).
This part is ideal for use in handheld and portable applications where low power consumption and small footprint are critical. The dual independent configuration allows for flexibility in circuit design.
| Qty | Low | High |
|---|---|---|
| 15,000+ | $0.15 | $0.15 |
| 30,000+ | $0.15 | $0.15 |
| 45,000+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V.
100 mA.
4-XFDFN (PG-TSLP-4-7).
600 mOhm at 10 mA and 100 MHz.
0.4 pF at 1 V and 1 MHz.
250 mW.