| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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84,000 pcs
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84000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Type | |
| Forward Current | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Resistance @ If, F | |
| Reverse Voltage | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Voltage |
The BAP70-05,215 is a silicon PIN diode from NXP Semiconductors featuring two planar PIN diodes in a common cathode configuration. It is designed for RF applications such as attenuators and switches.
Key electrical specifications include a reverse voltage rating of 50V, forward current of 100mA, and total power dissipation of 250mW. The diode exhibits low capacitance (250 fF typical at 20V, 1 MHz) and low forward resistance (1.4 Ω typical at 100mA, 100 MHz), making it suitable for high-frequency signal control.
The device is AEC-Q101 qualified and comes in a surface-mount SOT23 (TO-236AB) package with 3 leads. It operates over a junction temperature range of -65°C to 150°C.
The reverse voltage rating is 50V.
The forward current rating is 100mA.
The package is SOT23 (TO-236AB), surface mount, 3 pins.
Typical forward voltage is 0.95V, maximum 1.1V at 50mA.
Yes, it is AEC-Q101 qualified.