| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,600 pcs
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4600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAP70-03,115 is a planar PIN diode in a small SOD323 (SC-76) SMD plastic package, manufactured by NXP Semiconductors. It is designed as a high voltage controlled current RF resistor, making it suitable for attenuators, (SAT) TV, and car radio applications.
Key electrical specifications include a maximum reverse voltage of 50V, continuous forward current of 100mA, and total power dissipation of 500mW. The diode exhibits low capacitance: a maximum of 0.25pF at 20V reverse bias (1MHz) and typical values of 570fF at 0V, 400fF at 1V, and 270fF at 5V. Forward resistance is low, with a maximum of 1.9Ω at 100mA forward current (100MHz) and typical values as low as 1.4Ω. Additional characteristics include a charge carrier lifetime of 1.25µs and very low series inductance of 1.5nH.
The device operates over a junction temperature range of -65°C to +150°C and has a thermal resistance from junction to solder point of 120 K/W. It is surface mountable and supplied in the SOD323 package.
50 V.
100 mA.
Typical 0.9 V, maximum 1.1 V.
SOD323 (SC-76).
Maximum 0.25 pF at 1 MHz.
Maximum 1.9 Ω, typical 1.4 Ω at 100 MHz.
-65°C to +150°C (junction).