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BAP70-02,115 The BAP70-02,115 is a silicon PIN diode from NXP Semiconductors, packaged in a SOD523 SMD package. It features a 50V reverse voltage, 100mA forward current, and low capacitance of 0.25pF at 20V.
Mfr Part #:

BAP70-02,115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The BAP70-02,115 is a silicon PIN diode from NXP Semiconductors, packaged in a SOD523 SMD package. It features a 50V reverse voltage, 100mA forward current, and low capacitance of 0.25pF at 20V.
Total Stock: 20 pcs

BAP70-02,115 Available from 1 distributors

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BAP70-02,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Automotive Grade
Capacitance @ Vr, F
Charge Carrier Lifetime
Current
Current - Forward (Max)
Diode Type
Forward Voltage
Lead Style
Mounting Type
Operating Temperature
Package / Case
Power Dissipation (Max)
Resistance @ If, F
Reverse Current
Series Inductance
Storage Temperature
Supplier Device Package
Thermal Resistance (junction to solder point)
Voltage
Voltage - Reverse (Max)
diode_capacitance (Maximum @ Vr=20 V, f=1 MHz)
diode_capacitance (Typical @ VR = 0 V, f = 1 MHz)
diode_capacitance (Typical @ VR=1 V, f=1 MHz)
diode_capacitance (Typical @ Vr=5 V, f=1 MHz)
diode_forward_resistance (Typical @ If=0.5 mA, f=100 MHz)
diode_forward_resistance (Typical @ If=1 mA, f=100 MHz)
diode_forward_resistance (Typical @ If=10 mA, f=100 MHz)
diode_forward_resistance (Typical/Maximum @ IF = 100 mA, f = 100 MHz)

BAP70-02,115 Description

Short technical summary and product information.

The BAP70-02 is a planar silicon PIN diode designed for RF attenuator applications. It is housed in a SOD523 ultra-small SMD plastic package, featuring very low series inductance and low diode capacitance. Key electrical specifications include a maximum reverse voltage of 50V, continuous forward current of 100mA, and a forward voltage of 1.1V at 50mA. The diode capacitance is 0.25pF maximum at 20V and 1MHz. Forward resistance is 1.9Ω maximum at 100mA and 100MHz, with typical values ranging from 77Ω at 0.5mA to 1.4Ω at 100mA. Power dissipation is 415mW maximum, with an operating temperature range of -65°C to 150°C. The device is AEC-Q101 qualified, making it suitable for automotive environments. Typical applications include RF attenuators, satellite TV, and car radio systems.

BAP70-02,115 Quick Information

Product Type: PIN Diode
Series: BAP70-02
Canonical Name: NXP BAP70-02 Silicon PIN Diode
Subcategory: PIN Diodes

BAP70-02,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BAP70-02,115 Features

  • Low diode capacitance of 0.25pF at 20V.
  • High reverse voltage rating of 50V.
  • Low forward resistance of 1.9Ω at 100mA.
  • AEC-Q101 qualified for automotive use.
  • Surface mount SOD523 package.

BAP70-02,115 Applications

  • Ideal for RF attenuator circuits.
  • Used in satellite TV applications.
  • Suitable for car radio systems.
  • Designed for high frequency switching.

BAP70-02,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse voltage rating of the BAP70-02,115?

The maximum reverse voltage is 50V.

What is the maximum forward current?

The maximum forward current is 100 mA.

What is the forward voltage at 50 mA?

The maximum forward voltage is 1.1 V at 50 mA.

What package is the BAP70-02,115 available in?

It is available in a SC-79, SOD-523 surface mount package, with the supplier device package being SOD-523.

What is the diode capacitance at 20V?

The maximum diode capacitance is 0.25 pF at 20V and 1 MHz.

What is the typical forward resistance at 100 mA?

The typical forward resistance is 1.4 Ω at 100 mA and 100 MHz.

What is the operating temperature range?

The operating temperature range is -65°C to 150°C.

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