| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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234,000 pcs
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234000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BAP65-05 is a silicon PIN diode designed for RF switching and attenuation applications. It features a common cathode configuration with two PIN diodes in a single SOT-23 package. The device offers a maximum reverse breakdown voltage of 30V and a continuous forward current rating of 100mA, with a maximum power dissipation of 250mW.
Typical electrical characteristics include a reverse capacitance of 0.425pF at 20V and 1MHz, and a forward resistance of 350mOhm at 100mA and 100MHz, making it suitable for high-frequency signal routing. The operating junction temperature range is -65°C to 150°C.
The part is supplied in a TO-236-3 / SC-59 / SOT-23-3 package, with the supplier device package designated as SOT-23 (TO-236AB). This compact surface-mount package is ideal for space-constrained PCB designs in RF modules and communication equipment.
| Qty | Low | High |
|---|---|---|
| 25,155+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse breakdown voltage is 30V.
The maximum continuous forward current is 100mA.
The maximum power dissipation is 250mW.
It is available in TO-236-3, SC-59, SOT-23-3 package, with supplier device package SOT-23 (TO-236AB).
The operating junction temperature range is -65°C to 150°C.